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2N918 Datasheet, PDF (2/2 Pages) Semicoa Semiconductor – Type 2N918 Geometry 0013 Polarity NPN
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Data Sheet No. 2N918
Electrical Characteristics
OFF Characteristics
TC = 25oC unless otherwise specified
Symbol Min
Collector-Base Breakdown Voltage
IC = 1.0 µA
V(BR)CBO
30
Collector-Emitter Breakdown Voltage
IC = 3.0 mA
V(BR)CEO
15
Emitter-Base Breakdown Voltage
IC = 10 µA
V(BR)CEO
3.0
Collector-Base Cutoff Current
VCB = 25 V
ICBO1
3.0
Collector-Base Cutoff Current
VCB = 25 V, TA = 150oC
ICBO2
---
Emitter-Base Cutoff Current
VEB = 2.5 V
IEBO
---
ON Characteristics
Forward Current Transfer Ratio
IC = 500 µA, VCE = 10 V
IC = 3.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 10 V
IC = 3.0 mA, VCE = 1.0 V, TC = -55oC
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
Symbol
hFE1
hFE2
hFE3
hFE4
VBE(sat)
VCE(sat)
Min
10
20
20
10
---
---
Small Signal Characteristics
Magnitude of Common Emitter, Small Signal, Short Circuit
Forward Current Transfer Ratio
VCE = 10 V, IC = 4.0 mA, f = 100 MHz
Noise Figure
VCE = 6 V, IC = 1.0 mA, f = 60 MHz
Small Signal Power Gain
VCB = 12 V, IC = 6.0 mA, f = 200 MHz
Collector - Base Time Constant
VCB = 10 V, IE = -4.0 mA, f = 79.8 MHz
Oscillator Power Output
VCB = 15 V, IC = 8.0 mA, f > 500 MHz
Collector Efficiency
VCB = 15 V, IC = 8.0 mA, f > 500 MHz
Open Circuit Output Capacitance
VCB = 0 V, IE = 0, 100 kHz < f < 1 MHz
Open Circuit Output Capacitance
VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz
Symbol
|hFE|
NF
GPE
rb'Cc
po
n
COBO1
COBO2
CIBO
Min
6.0
---
15
---
---
---
---
---
---
Max
---
---
---
10
1
10
Max
---
200
---
---
1.0
0.4
Max
18
6.0
---
25
30
25
3.0
1.7
2.0
Unit
V
V
V
nA
µA
nA
Unit
---
---
---
---
V dc
V dc
Unit
---
dB
dB
ps
mW
---
pF
pF
pF