2N5238_02 Datasheet, PDF (2/2 Pages) Semicoa Semiconductor – Silicon NPN Transistor

2N5238
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T_A = 25°C
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
On Characteristics
Parameter
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Symbol
Test Conditions
Min
Typ
Max Units
V_(BR)CEO I_C = 100 mA
170
Volts
I_CBO1
I_CBO2
I_CEO
V_CB = 200 Volts
V_CB = 80 Volts,
V_CE = 160 Volts
10
µA
100
nA
10
µA
I_CEX1
I_CEX2
I_EBO1
I_EBO2
V_CE = 160Volts, V_EB= .5Volts
V_CE = 160Volts, V_EB= .5Volts,
T_A = 150°C
V_EB = 7 Volts
V_EB = 5 Volts
10
100
µA
10
µA
100
nA
Symbol
h_FE1
h_FE2
h_FE3
h_FE4
V_BEsat1
V_BEsat2
V_CEsat1
V_CEsat2
Test Conditions
I_C = 1 A, V_CE = 5 Volts
I_C = 5 A, V_CE = 5 Volts
I_C = 10 A, V_CE = 5 Volts
I_C = 5 A, V_CE = 5 Volts
T_A = -55°C
I_C = 5 A, I_B = 500 mA
I_C = 10 A, I_B = 1 A
I_C = 5 A, I_B = 500 mA
I_C = 10 A, I_B = 1 A
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Min
Typ
Max Units
50
225
40
120
10
20
1.5
Volts
2.5
0.6
Volts
2.5
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h_FE|
V_CE = 10 Volts, I_C = 200 mA,
f = 10 MHz
1.5
7.5
Small Signal Short Circuit Forward
Current Transfer Ratio
h_FE
V_CE = 5 Volts, I_C = 50 mA,
f = 1 kHz
40
250
Open Circuit Output Capacitance
C_OBO
V_CB = 10 Volts, I_E = 0 mA,
100 kHZ < f < 1 MHz
350
pF
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
t_d
t_r
I_C = 5 A, I_B = 500 mA,
t_s
t_f
I_C = 5 A, I_B1=I_B2 = 500 mA
50
ns
500
1.5
µs
500
ns
Copyright 2002
Rev. F
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX [phone]
www.SEMICOA.com
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