2N5109UB_02 Datasheet, PDF (2/2 Pages) Semicoa Semiconductor – Silicon NPN Transistor

2N5109UB
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T_A = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
Collector-Base Breakdown Voltage
V_(BR)CBO I_C = 100 µA
40
Volts
Collector-Emitter Breakdown Voltage V_(BR)CEO I_C = 5 mA
20
Volts
Collector-Emitter Breakdown Voltage V_(BR)CER I_C = 5 mA, R_BE = 10 Ω
40
Volts
Emitter-Base Breakdown Voltage
V_(BR)EBO I_E = 100 µA
3
Volts
Collector-Emitter Cutoff Current
I_CEO1
I_CEO2
V_CE = 15 Volts
V_CE = 15 Volts, T_A = 175°C
20
µA
5
mA
On Characteristics
Parameter
DC Current Gain
Collector-Emitter Saturation Voltage
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Symbol
Test Conditions
Min
Typ
Max Units
h_FE1 I_C = 50 mA, V_CE = 15 Volts
40
h_FE2 I_C = 50 mA, V_CE = 5 Volts
15
T_A = -55°C
V_CEsat I_C = 100 mA, I_B = 10 mA
150
0.5
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
V_CE = 15 Volts, f = 200 MHz,
Magnitude – Common Emitter, Short
|h_FE1| I_C = 25 mA
5
Circuit Forward Current Transfer Ratio |h_FE2| I_C = 50 mA
6
|h_FE3| I_C = 100 mA
5
Open Circuit Output Capacitance
C_OBO
V_CB = 5 Volts, I_E = 0 mA,
100 kHZ < f < 1 MHz
10.0
11.0
10.5
3.5
pF
Power Gain (narrow band) current
Cross Modulation
G_PE
V_CC = 15 Volts, I_C = 50 mA,
f = 200 MHz, P_in = -10 dB
11
cm
V_CC = 15 Volts, I_C = 50 mA,
54 dB output
dB
-57
dB
Noise Figure
Voltage Gain (wideband)
NF
V_CC = 15 Volts, I_C = 10 mA,
f = 200 MHz, P_in = -10 dB
V_CC = 15 Volts, I_C = 50 mA,
G 50 MHz < f < 216 MHz,
11
P_in = -10dB
3.5
dB
dB
Copyright 2002
Rev. D
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX [phone]
www.SEMICOA.com
Page 2 of 2