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| 2N5039 Datasheet, PDF (2/2 Pages) Semicoa Semiconductor – Silicon NPN Transistor | |||
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2N5039
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 200 mA
75
Volts
Emitter-Base Breakdown Voltage
V(BR)EBO IE = 25 mA
7
Volts
Collector-Base Cutoff Current
ICBO1 VCB = 125 Volts
1
µA
Collector-Emitter Cutoff Current
ICEO VCE = 55 Volts
1
µA
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
ICEX1
ICEX2
IEBO
VCE =85Volts, VEB =1.5Volts
VCE =85Volts, VEB=1.5Volts,
TA = 150°C
VEB = 5 Volts
5
100
µA
1
µA
On Characteristics
Parameter
DC Current Gain
Base-Emitter Voltage
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Symbol
hFE1
hFE2
hFE3
hFE4
VBE
VBEsat
VCEsat1
VCEsat2
Test Conditions
IC = 0.5 A, VCE = 5 Volts
IC = 2 A, VCE = 5 Volts
IC = 10 A, VCE = 5 Volts
IC = 10 A, VCE = 5 Volts
TA = -55°C
VCE = 5 Volts, IC = 10 A
IC = 20 A, IB = 5 A
IC = 10 A, IB = 1 A
IC = 20 A, IB = 5 A
Pulse Test: Pulse Width = 300 µs, Duty Cycle ⤠2.0%
Min
Typ
Max Units
30
30
150
15
10
1.8
Volts
3.3
Volts
1.0
Volts
2.5
Dynamic Characteristics
Parameter
Magnitude â Common Emitter, Short
Circuit Forward Current Transfer Ratio
Open Circuit Output Capacitance
Symbol
|hFE|
COBO
Test Conditions
VCE = 10 Volts, IC = 2 A,
f = 5 MHz
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
Min
Typ
Max Units
12
48
500
pF
Switching Characteristics
Saturated Turn-On Time
Saturated Turn-Off Time
tON
IC = 10 A, IB1 = 1.0 A
tOFF
IC = 10 A, IB1 = -IB2 = 1.0 A
0.5
µs
2.0
µs
Copyrightï 2002
Rev. E
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
Page 2 of 2
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