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2N5004 Datasheet, PDF (2/2 Pages) Semicoa Semiconductor – Type 2N5004 Geometry 9202 Polarity NPN
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Data Sheet No. 2N5004
Electrical Characteristics
TC = 25oC unless otherwise specified
OFF Characteristics
Symbol Min
Collector-Base Breakdown Voltage
IC = 100 mA, IB = 0, pulsed
V(BR)CBO
80
Emitter-Base Cutoff Current
VEB = 4 V, IC = 0
VEB = 5.5 V, IC = 0
IEBO1
---
IEBO2
---
Collector-Emitter Cutoff Current
VCE = 60 V, VBE = 0
ICES1
---
VCE = 100 V, VBE = 0
ICES2
---
VCE = 40 V, IB = 0
VCE = 60 V, VBE = -2.0 V, TC = +150oC
ICEO
ICEX
---
---
ON Characteristics
Thermal Impedance
Forward Current Transfer Ratio
IC = 50 mA, VCE = 5 V
IC = 2.5 A, VCE = 5 V, pulsed
IC = 5.0 A, VCE = 5 V, pulsed
IC = 2.55 A, VCE = 5 V pulsed, TC = -55oC
Base-Emitter Voltage, Nonsaturted
VCE = 5 V, IC = 2.5 V pulsed
Base-Emitter Saturation Voltage
IC = 2.5 A, IB = 250 mA, pulsed
IC = 5 A, IB = 500 mA, pulsed
Symbol
hFE1
hFE2
hFE3
hFE4
VBE
VBE(sat)1
VBE(sat)2
Min
50
70
40
25
---
---
---
Small Signal Characteristics
Symbol Min
Magnitude of Common Emitter Small Signal
Short Circuit Forward Current Transfer Ratio
|hfe|
7.0
VCE = 5 V, IC = 500 mA, f = 10 MHz
Common Emitter, Small Signal Short Circuit
Forward Current Transfer Ratio
VCE = 5 V, IC = 100 mA, f = 1 kHz
hfe
50
Open Circuit Output Capacitance
VCB = 10 V
COBO
---
Switching Time
Delay Time
IC = 5 A, IB1 = 500 mA
Storage Time
IB2 = -500 mA
Fall Time
VBE(off) = 3.7 V
Turn-Off Time
RL = 6 ohms
Symbol Min
tON
---
ts
---
tf
---
tOFF
---
Max
---
1.0
1.0
1.0
1.0
50
500
Max
3.1
---
200
---
---
1.45
1.45
2.2
Max
---
---
250
Max
0.5
1.4
0.5
1.5
Unit
V
µA
mA
µA
mA
µA
µA
Unit
oC/W
---
---
---
---
V dc
V dc
V dc
Unit
---
---
pF
Unit
µs
µs
µs
µs