2N5003_02 Datasheet, PDF (2/2 Pages) Semicoa Semiconductor – Silicon PNP Transistor

2N5003
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T_A = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
Collector-Emitter Breakdown Voltage V_(BR)CEO I_C = 100 mA
80
Volts
Collector-Emitter Cutoff Current
I_CEO V_CE = 40 Volts
50
µA
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Thermal Impedance
I_CEX
I_CES1
I_CES2
I_EBO1
I_EBO2
θ_JC
V_CE = 60 Volts, V_EB = 2 Volts,
T_A = 150°C
V_CE = 60 Volts
V_CE = 100 Volts
V_EB = 4 Volts
V_EB = 5.5 Volts
500
µA
1
µA
1
mA
1
µA
1
mA
3.1
°C/W
On Characteristics
Parameter
DC Current Gain
Base-Emitter Voltage
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Symbol
h_FE1
h_FE2
h_FE3
h_FE4
V_BE
V_BEsat1
V_BEsat2
V_CEsat1
V_CEsat2
Test Conditions
I_C = 50 mA, V_CE = 5 Volts
I_C = 2.5 A, V_CE = 5 Volts
I_C = 5 A, V_CE = 5 Volts
I_C = 2.5 A, V_CE = 5 Volts
T_A = -55°C
V_CE = 5 Volts, I_C = 2.5 A
I_C = 2.5 A, I_B = 250 mA
I_C = 5 A, I_B = 500 mA
I_C = 2.5 A, I_B = 250 mA
I_C = 5 A, I_B = 500 mA
Min
Typ
Max Units
20
30
90
20
15
1.45
Volts
1.45
Volts
2.20
0.75
Volts
1.50
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h_FE|
V_CE = 5 Volts, I_C = 500 mA,
f = 10 MHz
6
Small Signal Short Circuit Forward
Current Transfer Ratio
h_FE
V_CE = 5 Volts, I_C = 100 mA,
f = 1 kHz
20
Open Circuit Output Capacitance
C_OBO
V_CB = 10 Volts, I_E = 0 mA,
100 kHZ < f < 1 MHz
250
pF
Switching Characteristics
Saturated Turn-On Time
Rise Time
Fall Time
Saturated Turn-Off Time
t_ON
t_r
I_C = 5 A, I_B1=I_B2 = 500 mA,
t_f
V_BE = 3.7 Volts, RL = 6 Ω
t_OFF
0.5
1.4
0.5
µs
1.5
Copyright 2002
Rev. C
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX [phone]
www.SEMICOA.com
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