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2N5003 Datasheet, PDF (2/3 Pages) Semicoa Semiconductor – Type 2N5003 Geometry 9702 Polarity PNP
Data Sheet No. 2N5003
OFF Characteristics
Electrical Characteristics
TC = 25oC unless otherwise specified
Symbol Min
Thermal Impedance
Collector-Emitter Breakdown Voltage
IC = 100 mA, IB = 0, pulsed
V(BR)CEO
80
Collector-Emitter Cutoff Current
VCE = 40 V, VBE = 0, Bias Condition D
ICEO
---
VCE = 60 V, VBE = 0, Bias Condition C
ICES1
---
VCE = 100 V, VBE = 0, Bias Condition C
ICES2
---
Collector-Emitter Cutoff Current
VCE = 60 V, VBE = +2.0 V, TC = 150oC
ICEX
---
Base-Emitter Cutoff Current
VEB = 4 V, IC = 0, Bias Condition D
IEBO1
---
VEB = 5.5 V, IC = 0, Bias Condition D
IEBO2
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ON Characteristics
Forward Current Transfer Ratio
IC = 50 mA, VCE = 5 V
IC = 2.5 A, VCE = 5 V, pulsed
IC = 5.0 A, VCE = 5 V, pulsed
IC = 2.5 A, VCE = 5 V pulsed, TA = -55oC
Base-Emitter Voltage, Nonsaturted
IC = 2.5 V, VCE = 5 V pulsed
Base-Emitter Saturation Voltage
IC = 2.5 A, IB = 250 mA, pulsed
IC = 5 A, IB = 500 mA, pulsed
Symbol
hFE1
hFE2
hFE3
hFE4
VBE
VBE(sat)1
VBE(sat)2
Min
20
30
20
15
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---
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Small Signal Characteristics
Symbol Min
Magnitude of Common Emitter Small Signal
Short Circuit Forward Current Transfer Ratio
|hfe|
6
VCE = 5 V, IC = 500 mA, f = 10 MHz
Common Emitter, Small Signal Short Circuit
Forward Current Transfer Ratio
VCE = 5 V, IC = 100 mA, f = 1 kHz
hfe
20
Open Circuit Output Capacitance
VCB = 10 V, IE = 0, f = 1 MHz
COBO
---
Switching Time
Delay Time
IC = 5 A, IB1 = 500 mA
Storage Time
IB2 = -500 mA
Fall Time
VBE(off) = 3.7 V
Turn-Off Time
RL = 6 ohms
Symbol
tON
ts
tf
tOFF
Min
---
---
---
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Max
3.1
---
50
1.0
1.0
500
1.0
1.0
Max
---
90
---
---
1.45
1.45
2.2
Max
---
---
250
Max
0.5
1.4
0.5
1.5
Unit
oC/W
V
µA
µA
mA
µA
µA
mA
Unit
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---
---
---
V dc
V dc
V dc
Unit
---
---
pF
Unit
µs
µs
µs
µs