2N5002_02 Datasheet, PDF (2/2 Pages) Semicoa Semiconductor – Silicon NPN Transistor

2N5002
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T_A = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
Collector-Emitter Breakdown Voltage V_(BR)CEO I_C = 100 mA
80
Volts
Collector-Emitter Cutoff Current
I_CEO V_CE = 40 Volts
50
µA
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Thermal Impedance
I_CEX
I_CES1
I_CES2
I_EBO1
I_EBO2
θ_JC
V_CE = 60 Volts, V_EB = 2 Volts,
T_A = 150°C
V_CE = 60 Volts
V_CE = 100 Volts
V_EB = 4 Volts
V_EB = 5.5 Volts
500
µA
1
µA
1
mA
1
1
mA
10
°C/W
On Characteristics
Parameter
DC Current Gain
Base-Emitter Voltage
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Symbol
h_FE1
h_FE2
h_FE3
h_FE4
V_BE
V_BEsat1
V_BEsat2
V_CEsat1
V_CEsat2
Test Conditions
I_C = 50 mA, V_CE = 5 Volts
I_C = 2.5 A, V_CE = 5 Volts
I_C = 5 A, V_CE = 5 Volts
I_C = 2.5 A, V_CE = 5 Volts
T_A = -55°C
V_CE = 5 Volts, I_C = 2.5 A
I_C = 2.5 A, I_B = 250 mA
I_C = 5 A, I_B = 500 mA
I_C = 2.5 A, I_B = 250 mA
I_C = 5 A, I_B = 500 mA
Min
Typ
Max Units
20
30
90
20
15
1.45
Volts
1.45
Volts
2.20
0.75
Volts
1.50
Small Signal Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h_FE|
V_CE = 5 Volts, I_C = 500 mA,
f = 10 MHz
6
Small Signal Short Circuit Forward
Current Transfer Ratio
h_FE
V_CE = 5 Volts, I_C = 100 mA,
f = 1 kHz
20
Open Circuit Output Capacitance
C_OBO
V_CB = 10 Volts, I_E = 0 mA,
100 kHZ < f < 1 MHz
250
pF
Switching Characteristics
Saturated Turn-On Time
Rise Time
Fall Time
Saturated Turn-Off Time
t_ON
t_r
I_C = 5 A, I_B1=I_B2 = 500 mA,
t_f
V_BE = 3.7 Volts, RL = 6 Ω
t_OFF
0.5
1.4
0.5
µs
1.5
Copyright 2002
Rev. C
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX [phone]
www.SEMICOA.com
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