2N4957UB_02 Datasheet, PDF (2/2 Pages) Semicoa Semiconductor – Silicon PNP Transistor

2N4957UB
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T_A = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
Collector-Emitter Breakdown Voltage V_(BR)CEO I_C = 1 mA
30
Volts
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
I_CBO1
I_CBO2
I_CBO3
I_EBO1
V_CB = 20 Volts
V_CB = 30 Volts
V_CB = 20 Volts, T_A = 150°C
V_EB = 3 Volts
100
nA
100
µA
100
µA
100
µA
On Characteristics
Parameter
DC Current Gain
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Symbol
Test Conditions
Min
Typ
Max Units
h_FE1 I_C = 0.5 mA, V_CE = 10 Volts
15
h_FE2 I_C = 2 mA, V_CE = 10 Volts
20
h_FE3 I_C = 5 mA, V_CE = 10 Volts
30
165
h_FE4 I_C = 5 mA, V_CE = 10 Volts
10
T_A = -55°C
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Common-Emitter small signal power
gain
Noise Figure
Collector Base time constant
Collector Base feedback capacitance
Symbol
|h_FE|
G_PE
NF
r_b’C_C
C_cb
Test Conditions
V_CE = 10 Volts, I_C = 2 mA,
f = 100 MHz
I_C = 2 mA, V_CE = 10 Volts,
f = 450 MHz
V_CE = 10 Volts, I_C = 2 mA,
f = 450 MHz, R_L = 50 Ω
V_CB = 10 Volts, I_E = 2 mA,
f = 63.6 MHz
V_CB = 10 Volts, I_E = 0 mA,
100 kHZ < f < 1 MHz
Min
Typ
Max Units
12
36
17
25
dB
3.5
dB
1
8
ps
0.8
pF
Copyright 2002
Rev. D
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX [phone]
www.SEMICOA.com
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