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2N4150S Datasheet, PDF (2/2 Pages) Semicoa Semiconductor – Type 2N4150S Geometry 9201 Polarity NPN
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Data Sheet No. 2N4150S
Electrical Characteristics
TC = 25oC unless otherwise specified
OFF Characteristics
Symbol Min
Collector-Base Breakdown Voltage
IC = 10 µA
V(BR)CBO
100
Collector-Emitter Breakdown Voltage
IC = 0.1 A, pulsed
V(BR)CEO
70
Emitter-Base Breakdown Voltage
IE = 10 µA
V(BR)EBO
7.0
Collector-Emitter Cutoff Current
VCE = 60 V
ICEO1
---
VBE = 0.5 V, VCE = 100 V
VBE = -0.5 V, VCE = 80 V, TC = +150oC
ICEX
ICEX2
---
Emitter-Base Cutoff Current
VEB = 5V
IEBO
---
Collector-Base Cutoff Current
VCB = 80 V
ICBO
---
Max
---
---
---
10
10
100
0.1
0.1
ON Characteristics
Forward current Transfer Ratio
IC = 1 A, VCE = 5 V, pulsed
IC = 5 A, VCE = 5.0 V, pulsed
IC = 10 A, VCE = 5 V
IC = 5 A, VCE = 5.0 V, TC = -55oC
Collector-Emitter Saturation Voltage
IC = 5 A, IB = 0.5 A pulsed
IC = 10 A, IB = 1 A, pulsed
Base-Emitter Saturation Voltage
IC = 5 A, IB = 0.5 A, pulsed
IC = 10 A, IB = 1 A, pulsed
Safe Operating Area, Continuous DC
TC = 25oC, t = 1.0 s
Small Signal Characteristics
Magnitude of Common Emitter Small Signal
Short Circuit Forward Current Transfer Ratio
VCE = 10 V, IC = 0.2 A, f = 10 MHz
Open Circuit Output Capacitance
VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz
Small Signal, Short Circuit, Forward Current
VCE = 10 V, IC = 50 mA, f = 1 kHz
Switching Characteristics
Delay Time
Per Figure 4, MIL-PRF-19500/394C
Rise Time
Per Figure 4, MIL-PRF-19500/394C
Storage Time
Per Figure 4, MIL-PRF-19500/394C
Fall Time
Per Figure 4, MIL-PRF-19500/394C
Symbol
hFE1
hFE2
hFE3
hFE4
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
Symbol
|hfe|
COBO
hfe
Symbol
td
tr
ts
tf
Min
Max
50
200
40
120
10
---
20
---
---
0.6
---
2.5
---
1.5
---
2.5
VCE = 40 V, IC = 0.22 A
VCE = 70 V, IC = 90 mA
Min
Max
1.5
7.5
---
350
40
160
Min
Max
---
50
---
500
---
1.5
---
50
Unit
V
V
V
µA
µA
µA
µA
µA
Unit
---
---
---
---
V dc
V dc
V dc
V dc
Unit
---
pF
---
Unit
ns
ns
ns
ns