2N4033_02 Datasheet, PDF (2/2 Pages) Semicoa Semiconductor – Silicon PNP Transistor

2N4033
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T_A = 25°C
Off Characteristics
Parameter
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Symbol
Test Conditions
Min
Typ
Max Units
I_CBO1
I_CBO2
I_CBO3
I_CEX
V_CB = 80 Volts
V_CB = 60 Volts
V_CB = 60 Volts, T_A = 150°C
V_CE = 60 Volts, V_EB = 2 Volts
10
µA
10
nA
25
µA
25
nA
I_EBO1
I_EBO2
V_BE = 5 Volts
V_BE = 3 Volts
10
µA
25
nA
On Characteristics
Parameter
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Symbol
Test Conditions
Min
Typ
Max Units
h_FE1 I_C = 100 µA, V_CE = 5 Volts
50
h_FE2 I_C = 100 mA, V_CE = 5 Volts
100
h_FE3 I_C = 500 mA, V_CE = 5 Volts
70
h_FE4 I_C = 1 A, V_CE = 5 Volts
25
h_FE5 I_C = 500 mA, V_CE = 5 Volts
30
T_A = -55°C
V_BEsat1 I_C = 150 mA, I_B = 15 mA
V_BEsat2 I_C = 500 mA, I_B = 50 mA
V_CEsat1 I_C = 150 mA, I_B = 15 mA
V_CEsat2 I_C = 500 mA, I_B = 50 mA
V_CEsat3 I_C = 1 A, I_B = 100 mA
300
0.9
Volts
1.2
0.15
0.50
Volts
1.00
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h_FE|
V_CE = 10 Volts, I_C = 50 mA,
f = 100 MHz
1.5
Open Circuit Output Capacitance
C_OBO
V_CB = 10 Volts, I_E = 0 mA,
100 kHZ < f < 1 MHz
6.0
20
pF
Open Circuit Input Capacitance
C_IBO
V_EB = 0.5 Volts, I_C = 0 mA,
100 kHZ < f < 1 MHz
80
pF
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
t_d
t_r
I_C = 500 mA, I_B = 50 mA
t_s
t_f
I_C = 500 mA, I_B = 50 mA
15
25
ns
175
35
ns
Copyright 2002
Rev. E
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX [phone]
www.SEMICOA.com
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