English
Language : 

2N4029 Datasheet, PDF (2/2 Pages) Semicoa Semiconductor – Type 2N4029 Geometry 6700 Polarity PNP
◁
Data Sheet No. 2N4029
Electrical Characteristics
OFF Characteristics
TC = 25oC unless otherwise specified
Symbol Min
Collector-Base Breakdown Voltage
IC = 10 µA, pulsed
V(BR)CBO
80
Collector-Emitter Breakdown Voltage
IC = 10 mA, pulsed
V(BR)CEO
80
Emitter-Base Breakdown Voltage
IC = 10 µA, pulsed
V(BR)EBO
5.0
Collector-Base Cutoff Current
VCB = 60 V
VCB = 60 V, TA = +150oC
ICBO1
---
ICBO2
---
Collector-Emitter Cutoff Current
VCE = 60 V, VBE = 2.0 V
ICEX1
---
Base-Emitter Cutoff Current
VBE = 3 V
IEBO
---
Max
---
---
---
10
25
25
25
Unit
V
V
V
nA
µA
nA
nA
ON Characteristics
Forward current Transfer Ratio
IC = 100 µA, VCE = 5 V
IC = 100 mA, VCE = 5.0 V (pulse test)
IC = 500 mA, VCE = 5 V (pulse test)
IC = 1.0 A, VCE = 5 V (pulse test)
IC = 500 mA, VCE = 5.0 V (pulse test), TA = -55oC
Collector-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA (pulse test)
IC = 500 mA, IB = 50 mA (pulse test)
IC = 1.0 A, IB = 100 mA (pulse test)
Base-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA (pulse test)
IC = 500 mA, IB = 50 mA (pulse test)
Small Signal Characteristics
Magnitude of Common Emitter Small Signal
Short Circuit Forward Current Transfer Ratio
VCE = 10 V, IC = 50 mA, f = 100 MHz
Open Circuit Output Capacitance
VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz
Switching Characteristics
Delay Time
IC = 500 mA, IB1 = 50 mA
Rise Time
IC = 500 mA, IB1 = 50 mA
Storage Time
IC = 500 mA, IB1 = IB2 = 50 mA
Fall Time
IC = 500 mA, IB1 = IB2 = 50 mA
Symbol
hFE1
hFE2
hFE3
hFE4
hFE5
VCE(sat)1
VCE(sat)2
VCE(sat)3
VBE(sat)1
VBE(sat)2
Symbol
|hfe|
COBO
CIBO
Symbol
td
tr
ts
tf
Min
50
100
70
25
30
---
---
---
---
---
Min
1.5
---
---
Min
---
---
---
---
Max
---
300
---
---
---
0.15
0.5
1.0
0.9
1.2
Max
6.0
20
80
Max
15
25
175
35
Unit
---
---
---
---
---
V dc
V dc
V dc
V dc
V dc
Unit
---
pF
pF
Unit
ns
ns
ns
ns