2N3866A_02 Datasheet, PDF (2/2 Pages) Semicoa Semiconductor – Silicon NPN Transistor

2N3866A
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T_A = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
Collector-Base Breakdown Voltage
V_(BR)CBO I_C = 100 µA
60
Volts
Collector-Emitter Breakdown Voltage V_(BR)CEO I_C = 5 mA
30
Volts
Emitter-Base Breakdown Voltage
V_(BR)EBO I_E = 100 µA
3.5
Volts
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
I_CEO
I_CES1
I_CES2
V_CE = 28 Volts
V_CE = 55 Volts
V_CE = 55 Volts, T_A = 150°C
20
µA
100
µA
2
mA
On Characteristics
Parameter
DC Current Gain
Collector-Emitter Saturation Voltage
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Symbol
Test Conditions
Min
Typ
Max Units
h_FE1 I_C = 50 mA, V_CE = 5 Volts
25
h_FE2 I_C = 360 mA, V_CE = 5 Volts
8
h_FE3 I_C = 50 mA, V_CE = 5 Volts
12
T_A = -55°C
V_CEsat1 I_C = 100 mA, I_B = 10 mA
200
1
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h_FE|
V_CE = 15 Volts, I_C = 50 mA,
f = 200 MHz
4
Open Circuit Output Capacitance
C_OBO V_CB = 28 Volts, I_E = 0 mA,
7.5
3.5
pF
Collector Efficiency
Power Output
V_CC = 28 Volts, f = 400 MHz
η₁
P_in = 0.15 W
45
η₂
P_in = 0.075 W
40
V_CC = 28 Volts, f = 400 MHz
P_1out P_in = 0.15 W
1.0
P_1out P_in = 0.075 W
0.5
%
2
Watts
Copyright 2002
Rev. F
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX [phone]
www.SEMICOA.com
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