2N3866A Datasheet, PDF (2/2 Pages) Semicoa Semiconductor – Type 2N3866A Geometry 1007 Polarity NPN

Data Sheet No. 2N3866A
Electrical Characteristics
OFF Characteristics
T_C = 25^oC unless otherwise specified
Symbol Min
Collector-Base Breakdown Voltage
I_C = 100 µA, pulsed
Collector-Emitter Breakdown Voltage
I_C = 5 mA, pulsed
V_(BR)CBO
60
V_(BR)CEO
30
Collector-Emitter Breakdown Voltage
I_C = 40 mA, V_BE = -5V, clamped
V_(BR)CEC
55
Emitter-Base Breakdown Voltage
I_E = 100 µA, pulsed
V_(BR)EBO
3.5
Collector-Emitter Cutoff Current
V_CE = 55 V
I_CES
---
Collector-Emitter Cutoff Current
V_CE = 55 V, T_A = +150^oC
I_CES2
---
Collector-Emitter Cutoff Current
V_CE = 28 V
I_CEO
---
Max
---
---
---
---
100
2.0
20
Unit
V
V
---
V
µA
mA
µA
ON Characteristics
Forward Current Transfer Ratio
I_C = 50 mA, V_CE = 5.0 V (pulsed)
I_C = 360 mA, V_CE = 5.0 V (pulsed)
I_C = 50 mA, V_CE = 5.0 V (pulsed), T_A = -55^oC
Collector-Emitter Saturation Voltage
I_C = 100 mA, I_B = 10 mA (pulsed)
Power Output
V_CC = 28 V, P_IN = 0.15 W, f = 400 MHz
Power Output
V_CC = 28 V, P_IN = 0.075 W, f = 400 MHz
Collector Efficiency
V_CC = 28 V, P_IN = 0.15 W, f = 400 MHz
Collector Efficiency
V_CC = 28 V, P_IN = 0.075 W, f = 400 MHz
Symbol
h_FE1
h_FE2
h_FE3
V_CE(sat)
P_1out
P_2out
n₁
n₂
Min
25
8.0
12
---
1.0
0.5
45
40
Max
200
---
---
1.0
2.0
---
---
---
Unit
---
---
---
V dc
W
W
%
%
Small Signal Characteristics
Magnitude of Common Emitter, Small Signal, Short Circuit
Current Transfer Ratio
I_C = 50 mA, V_CE = 15 V, f = 200
Open Circuit Output Capacitance
V_CB = 28 V, I_E = 0
Symbol
|h_FE|
C_OBO
Min
4.0
---
Max
7.5
3.5
Unit
---
pF