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| 2N3810_02 Datasheet, PDF (2/3 Pages) Semicoa Semiconductor – Silicon PNP Transistor | |||
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2N3810
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 100 µA
60
Volts
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ICBO1
ICBO2
ICBO3
IEBO1
IEBO2
VCB = 60 Volts
VCB = 50 Volts
VCB = 50 Volts, TA = 150°C
VEB = 5 Volts
VEB = 4 Volts
10
µA
10
nA
10
µA
10
µA
10
nA
On Characteristics
Parameter
DC Current Gain
Base-Emitter Voltage
Base-Emitter Saturation Voltage
Collector-Emitter Saturation
Voltage
Symbol
hFE2
hFE3
hFE4
hFE5
hFE6
hFE3-1/hFE3-2
VBE
|VBE1-VBE2|1
|VBE1-VBE2|2
|VBE1-VBE2|3
VBEsat1
VBEsat2
VCEsat1
VCEsat2
Pulse Test: Pulse Width = 300 µs, Duty Cycle ⤠2.0%
Test Conditions
Min
Typ
Max Units
IC = 10 µA, VCE = 5 Volts
100
IC = 100 µA, VCE = 5 Volts
150
IC = 1 mA, VCE = 5 Volts
150
IC = 10 mA, VCE = 5 Volts
125
IC = 100 µA, VCE = 5 Volts
60
TA = -55°C
IC = 100 µA, VCE = 5 Volts
0.9
VCE = 5 Volts, IC = 100 µA
VCE = 5 Volts, IC = 10 µA
VCE = 5 Volts, IC = 100 µA
VCE = 5 Volts, IC = 10 mA
IC = 100 µA, IB = 10 µA
IC = 1 mA, IB = 100 µA
IC = 100 µA, IB = 10 µA
IC = 1 mA, IB = 100 µA
450
450
1.0
0.7
Volts
5
mVolts
3
mVolts
5
mVolts
0.7
Volts
0.8
0.20
Volts
0.25
Copyrightï 2002
Rev. G
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
Page 2 of 2
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