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2N2484 Datasheet, PDF (2/3 Pages) NXP Semiconductors – NPN general purpose transistor
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Data Sheet No. 2N2484
Electrical Characteristics
OFF Characteristics
TC = 25oC unless otherwise specified
Symbol Min
Collector-Base Breakdown Voltage
IC = 10 µA
V(BR)CBO
60
Collector-Emitter Breakdown Voltage
IC = 10 mA
V(BR)CEO
60
Emitter-Base Breakdown Voltage
IE = 10 µA
V(BR)EBO
6.0
Collector-Base Cutoff Current
VCB = 45 V
VCB = 45 V, TA = +150oC
ICBO1
---
ICBO2
---
Emitter-Base Cutoff Current
VEB = 5.0 V
IEBO
---
Collector-Emitter Cutoff Current
VCE = 5 V
ICEO
---
VCE =45 V
ICES
---
Max
---
---
---
5
10
2
2
5
Unit
V
V
V
nA
µA
nA
nA
nA
ON Characteristics
DC Current Gain
IC = 1 µA, VCE = 5 V
IC = 10 µA, VCE = 5 V
IC = 100 µA, VCE = 5 V
IC = 500 µA, VCE = 5 V
IC = 1 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V (pulsed)
IC = 10 µA, VCE = 5 V, TA = -55oC
Collector-Emitter Saturation Voltage Saturated
IC = 150 mA, IB = 100 µA
Base-Emitter Saturation Voltage Non Saturated
VCE = 5 V, IC = 100 µA
Symbol
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
hFE7
VCE(sat)
VBE
Min
45
200
225
250
250
225
35
---
0.5
Max
---
500
675
800
800
800
---
0.3
0.7
Unit
---
---
---
---
---
---
---
V dc
V dc
 ▷