2N1893S_02 Datasheet, PDF (2/2 Pages) Semicoa Semiconductor – Silicon NPN Transistor

2N1893S
Silicon NPN Transistor
Data Sheet
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
On Characteristics
Parameter
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
ELECTRICAL CHARACTERISTICS
characteristics specified at T_A = 25°C
Symbol
Test Conditions
V_(BR)CEO I_C = 30 mA
Min
Typ
Max Units
80
Volts
V_(BR)CER I_C = 10 mA, R_BE = 10 Ω
100
Volts
I_CBO1
I_CBO2
I_CBO3
I_EBO1
I_EBO2
V_CB = 120 Volts
V_CB = 90 Volts
V_CE = 90 Volts, T_A = 150 ^OC
V_EB = 7 Volts
V_EB = 5 Volts
100
µA
10
nA
15
µA
100
µA
10
nA
Symbol
h_FE1
h_FE2
h_FE3
h_FE4
V_BEsat
V_CEsat
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Test Conditions
Min
Typ
Max Units
I_C = 0.1 mA, V_CE = 10 Volts
20
I_C = 10 mA, V_CE = 10 Volts
35
I_C = 150 mA, V_CE = 10 Volts
40
I_C = 10 mA, V_CE = 10 Volts,
20
T_A = -55 ^OC
I_C = 150 mA, I_B = 15 mA
120
1.3
Volts
I_C = 150 mA, I_B = 15 mA
5.0
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h_FE|
V_CE = 10 Volts, I_C = 50 mA,
f = 20 MHz
3
Short Circuit Forward Current Transfer
Ratio
f = 1 kHz
h_FE1 V_CE = 5 Volts, I_C = 1 mA
h_FE2 V_CE = 10 Volts, I_C = 5 mA
35
45
Short Circuit Input Impedance
h_ie
V_CB = 10V, I_C = 5mA
4
Open Circuit Output Admittance
h_oe
V_CB = 10V, I_C = 5mA
Open Circuit reverse Voltage Transfer
Ratio
h_re
V_CB = 10V, I_C = 5mA
Open Circuit Output Capacitance
C_OBO
V_CB = 10 Volts, I_C = 0 mA,
100 kHZ < f < 1 MHz
2
Switching Characteristics
Pulse Response
t_on + t_off
Typ
Max Units
10
100
150
8
Ω
0.5
µΩ
1.5x10^-4
15
pF
30
ns
Copyright 2002
Rev. F
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX [phone]
www.SEMICOA.com
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