AS6UA5128 Datasheet, PDF (1/9 Pages) Semicoa Semiconductor – 2.3V to 3.6V 512K×8 Intelliwatt low-power CMOS SRAM

October 2000
AS6UA5128
®
2.3V to 3.6V 512K×8 Intelliwatt low-power CMOS SRAM
Features
• AS6UA5128
• Intelliwatt™ active power circuitry
• Industrial and commercial temperature ranges available
• Organization: 524,288 words × 8 bits
• 2.7V to 3.6V at 55 ns
• 2.3V to 2.7V at 70 ns
• Low power consumption: ACTIVE
- 144 mW at 3.6V and 55 ns
- 68 mW at 2.7V and 70 ns
• Low power consumption: STANDBY
- 72 µW max at 3.6V
- 41 µW max at 2.7V
- 28 µW max at 2.3V
• 1.2V data retention
• Equal access and cycle times
• Easy memory expansion with CS, OE inputs
• Smallest footprint packages
- 36(48)-ball FBGA
- 32-pin TSOP I and TSOP II packages are available on
Alliance AS6UB5128 product family (available January
2001)
• ESD protection ≥ 2000 volts
• Latch-up current ≥ 200 mA
Logic block diagram
V_CC
GND
Input buffer
A0
A1
A2
A3
512K×8
A4
Array
A5
A6
(4,194,304)
A7
A8
Column decoder
Control
circuit
I/O8
I/O1
WE
OE
CS
Pin arrangement
36(48)-CSP BGA Package (shading indicates no ball)
1
2
3
4
5
6
A
A₀
A₁
NC
A₃
A₆
A₈
B
I/O5 A₂
WE
A₄
A₇ I/O₁
C I/O6
NC
A₅
I/O₂
D
V_SS
V_CC
E
V_CC
V_SS
F I/O7
A₁₈
A₁₇
I/O3
G
I/O8 OE
CS
A₁₆ A₁₅ I/O4
H
A₉
A₁₀
A₁₁
A₁₂
A₁₃
A₁₄
Selection guide
V_CC Range
Min
Typ²
Max
Product
(V)
(V)
(V)
AS6UA5128
2.7
3.0
3.6
AS6UA5128
2.3
2.5
2.7
Speed
(ns)
55
70
Power Dissipation
Operating (I_CC)
Standby (I_SB1)
Max (mA)
Max (µA)
2
20
1
15
10/6/00
ALLIANCE SEMICONDUCTOR
1
Copyright ©2000 Alliance Semiconductor. All rights reserved.