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2N3507L_07 Datasheet, PDF (1/2 Pages) Semicoa Semiconductor – Silicon NPN Transistor | |||
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Description
SEMICOA offers:
⢠Screening and processing per MIL-PRF-19500 Appendix E
⢠JAN level (2N3507LJ)
⢠JANTX level (2N3507LJX)
⢠JANTXV level (2N3507LJV)
⢠JANS level (2N3507LJS)
⢠QCI to the applicable level
⢠100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
⢠Radiation testing (total dose) upon request
Please contact SEMICOA for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, TA = 25OC
Derate linearly above 25OC
Power Dissipation, TC = 25OC
Derate linearly above 25OC
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Symbol
VCEO
VCBO
VEBO
IC
PT
PT
RθJA
TJ
TSTG
2N3507L
Silicon NPN Transistor
Data Sheet
Applications
⢠General purpose switching transistor
⢠Low power
⢠NPN silicon transistor
Features
⢠Hermetically sealed TO-5 metal can
⢠Also available in chip configuration
⢠Chip geometry 1506
⢠Reference document:
MIL-PRF-19500/349
Benefits
⢠Qualification Levels: JAN, JANTX,
JANTXV and JANS
⢠Radiation testing available
TC = 25°C unless otherwise specified
Rating
Unit
50
Volts
80
Volts
5
Volts
3
A
1
W
5.71
mW/°C
5
W
28.6
mW/°C
175
°C/W
-65 to +200
°C
Copyright© 2007
Rev. E
SEMICOA
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
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