2N3501UB Datasheet, PDF (1/2 Pages) Semicoa Semiconductor – Silicon NPN Transistor

Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N3501UBJ)
• JANTX level (2N3501UBJX)
• JANTXV level (2N3501UBJV)
• JANS level (2N3501UBJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or [phone]
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T_A = 25^OC
Derate linearly above 25^OC
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_T
R_θJA
T_J
T_STG
2N3501UB
Silicon NPN Transistor
Data Sheet
Applications
• General purpose
• Low power
• NPN silicon transistor
Features
• Hermetically sealed TO-39 metal can
• Also available in chip configuration
• Chip geometry 5620
• Reference document:
MIL-PRF-19500/366
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
T_C = 25°C unless otherwise specified
Rating
Unit
150
Volts
150
Volts
6
Volts
300
mA
.5
W
3.08
mW/°C
325
°C/W
-65 to +200
°C
-65 to +200
°C
Copyright© 2004
Rev. J.2
Semicoa
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX [phone]
www.SEMICOA.com
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