2N2920_02 Datasheet, PDF (1/2 Pages) Semicoa Semiconductor – Silicon NPN Transistor

2N2920
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N2920J)
• JANTX level (2N2920JX)
• JANTXV level (2N2920JV)
• JANS level (2N2920JS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or [phone]
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T_A = 25°C
Derate linearly above 25°C
Power Dissipation, T_C = 25°C
Derate linearly above 25°C
Operating Junction Temperature
Storage Temperature
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_T
P_T
T_J
T_STG
Applications
• General purpose
• Matched Dual transistors
• NPN silicon transistor
Features
• Hermetically sealed TO-78 metal can
• Also available in chip configuration
• Chip geometry 0307
• Reference document:
MIL-PRF-19500/355
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
T_C = 25°C unless otherwise specified
Rating
Unit
60
Volts
70
Volts
5
Volts
50
mA
300 one section
600 both sections
1.71one section
3.43 both sections
750 one section
1.5 both sections
4.286 one section
7.14 both sections
mW
mW/°C
MW
W
mW/°C
-65 to +200
°C
Copyright 2002
Rev. H
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX [phone]
www.SEMICOA.com
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