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2N2904A_02 Datasheet, PDF (1/2 Pages) Semicoa Semiconductor – Silicon PNP Transistor
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N2904AJ)
• JANTX level (2N2904AJX)
• JANTXV level (2N2904AJV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, TA = 25 °C
Derate above 60 °C
Power Dissipation, TC = 25 °C
Derate above 25 °C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Symbol
VCEO
VCBO
VEBO
IC
PT
PT
RθJA
TJ
TSTG
2N2904A
Silicon PNP Transistor
Data Sheet
Applications
• General purpose
• Low power
• PNP silicon transistor
Features
• Hermetically sealed TO-39 metal can
• Also available in chip configuration
• Chip geometry 0600
• Reference document:
MIL-PRF-19500/290
Benefits
• Qualification Levels: JAN, JANTX, and
JANTXV
• Radiation testing available
TC = 25°C unless otherwise specified
Rating
Unit
60
Volts
60
Volts
5
Volts
600
mA
0.8
W
5.7
mW/°C
3.0
W
17.2
mW/°C
175
°C/W
-65 to +200
°C
-65 to +200
°C
Copyright 2002
Rev. H
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
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