2N2857UB_02 Datasheet, PDF (1/2 Pages) Semicoa Semiconductor – Silicon NPN Transistor

Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N2857UBJ)
• JANTX level (2N2857UBJX)
• JANTXV level (2N2857UBJV)
• JANS level (2N2857UBJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or [phone]
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T_A = 25^OC
Derate linearly above 25^OC
Power Dissipation, T_C = 25^OC
Derate linearly above 25^OC
Operating Junction Temperature
Storage Temperature
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_T
P_T
T_J
T_STG
2N2857UB
Silicon NPN Transistor
Data Sheet
Applications
• Ultra-High frequency transistor
• Low power
• NPN silicon transistor
Features
• Hermetically sealed Cersot ceramic
• Also available in chip configuration
• Chip geometry 0011
• Reference document:
MIL-PRF-19500/343
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
T_C = 25°C unless otherwise specified
Rating
Unit
15
Volts
30
Volts
3
Volts
40
mA
200
1.14
300
1.71
-65 to +200
mW
mW/°C
mW
mW/°C
°C
-65 to +200
°C
Copyright 2002
Rev. F
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX [phone]
www.SEMICOA.com
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