D2013UK Datasheet, PDF (3/4 Pages) Seme LAB – METAL GATE RF SILICON FET

D2013UK





3RXW
:

I
,GT
9GV

*+] _{ *DLQ}
$
9 ^{ G%}











3LQ:
3RXW
*DLQ
Figure 1
OutputPower and Gain vs. Input Power.






3RXW

:
'UDLQ(IILFLHQF\



I
*+]


,GT $

9GV 9








3LQ:
3RXW
'UDLQ(IILFLHQF\
Figure 2
Output Power and efficiency vs. Input Power.



,0' ^
G%F ^





OPTIMUM SOURCE AND LOAD IMPEDANCE
I 0+]
I 0+]
9GV 9
Frequency
MHz
1000MHZ
ZS
W
1.3 - j4.6






3RXW:3(3
,GT $
,GT $
Figure 3
IMD Vs. Output Power.
Typical S Parameters
! Vds=28V, Idq=0.8A
# MHz S MA R 50
!Freq
!MHz
100
200
300
400
500
600
700
800
900
1000
S11
mag
0.841
0.871
0.891
0.902
0.923
0.933
0.955
0.955
0.966
0.955
ang
-122
-146
-156
-163
-170
-174
-175
-177
179
177
S21
S12
mag ang mag ang
24.547 98 0.01318 13
11.482 69 0.01
0
6.683 52 0.00653 10
4.365 40 0.00596 49
3.055 27 0.00891 71
2.113 22 0.01349 79
1.758 19 0.01862 85
1.413 12 0.02344 82
1.161 5 0.02851 80
0.944 3 0.03236 80
S22
mag
0.49
0.61
0.708
0.767
0.813
0.851
0.881
0.902
0.902
0.902
ang
-94
-125
-137
-146
-155
-165
-166
-170
-177
-179
ZL
W
2.5 - j2.6
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Prelim.12/00