D1004UK Datasheet, PDF (3/4 Pages) Seme LAB – METAL GATE RF SILICON FET

D1004UK
150
80
125
70
100
Pout
75
W
50
25
V_DS = 28V
I_DQ = 0.4A
f = 175MHz
60
Efficiency
50
%
40
30
0
20
0
1
2
3
4
5
6
7
8
Pin W
Pout
Drain Efficiency
Figure 1 – Power Output and Efficiency
vs. Power Input.
-20
-25
IMD -30
dBc
-35
-40
V_DS = 28V
f₁ = 175.0MHz
f₂ = 175.1MHz
I_DQ = 0.4A
-45
10 20 30 40 50 60 70 80 90
Pout W PEP
IMD3
Figure 3 – IMD vs. Output Power.
150
125
100
Pout
75
W
50
25
0
0
V_DS = 28V
I_DQ = 0.4A
f = 175MHz
1
2
3
4
5
Pin W
6
7
Pout
Gain
22
20
18
Gain
16
dB
14
12
10
8
Figure 2 – Power Output & Gain
vs. Power Input.
D1004UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
Z_S
Z_L
MHz
Ω
Ω
175MHz 2.2 + j1.9 3.2 - j0.5
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Prelim. 6/99