D1003UK Datasheet, PDF (3/4 Pages) Seme LAB – METAL GATE RF SILICON FET

D1003UK
140
80
120
70
100
60
Pout ⁸⁰
50 _{Drain Efficiency}
W 60
40 %
40
V_DS = 28V
30
20
I_DQ = 0.3A
20
f = 175MHz
0
10
0
1
2
3
4
5
6
7
8
Pin W
Pout
Drain Efficiency
Figure 1 – Power Output and Efficiency
vs. Power Input.
-10
-15
-20
IMD3 ^-25
dBc ^-30
-35
-40
-45
-50
0
V_DS = 28V
f₁ = 175.0MHz
f₂ = 175.1MHz
20
40
60
80
100
120
Pout W PEP
Idq = 0.3A
Idq = 2A
Figure 3 – IMD vs. Output Power.
140
17
120
16
100
15
Pout 80
14 Gain
W
60
13 dB
40
V_DS = 28V
12
20
I_DQ = 0.3A
11
f = 175MHz
0
10
0
1
2
3
4
5
6
7
8
Pin W
Pout
Gain
Figure 2 – Power Output & Gain
vs. Power Input.
D1003UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
Z_S
Z_L
MHz
Ω
Ω
175MHz 2.0 – j4.3 3.7 – j4.5
Typical S Parameters
!
V_DS = 28V, I_DQ = 0.3A
# MHZ S MA R 50
!Freq
MHz
70
100
150
200
250
300
350
400
450
500
S11
S21
mag ang mag
0.83 -156.8 6.9
0.87 -163.3 4.3
0.91 -171.0 2.3
0.93 -177.6 1.4
0.95 177.6 0.9
0.97 173.6 0.7
0.96 168.6 0.5
0.98 165.0 0.4
0.98 161.9 0.3
0.97 159.3 0.3
S12
ang mag ang
59.9 0.018 -16.7
46.9 0.012 -15.5
31.5 0.007 37.1
22.6 0.013 81.0
14.3 0.022 86.6
10.5 0.032 86.9
4.0 0.039 80.0
3.9 0.048 80.0
2.9 0.053 77.5
2.1 0.064 74.8
S22
mag ang
0.65 -137.0
0.75 -147.2
0.84 -159.7
0.90 -168.8
0.93 -175.0
0.95 179.5
0.96 175.3
0.98 172.0
0.98 169.8
0.97 166.5
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Prelim. 6/99