D1002UK Datasheet, PDF (3/4 Pages) Seme LAB – METAL GATE RF SILICON FET

D1002UK
80
80
70
70
60
60
50
P _out
40
W
30
20
10
f₁ = 175.0MHz
I_dq = 0.2A
V_DS = 28V
50
Drain Efficiency
40
%
30
20
10
0
0
0
1
2
3
4
5
6
7
8
Pin W
Pout
Drain Efficiency
Figure 1 – Power Output and Efficiency
vs. Power Input.
-10
-15
-20
IMD3 ^-25
dBc ^-30
-35
-40
-45
-50
0
f₁ = 175.0MHz
f₂ = 175.1MHz
V_DS = 28V
5 10 15 20 25 30 35 40 45 50 55 60 65
Pout W PEP
Idq = 0.2A
Idq = 1A
Figure 3 – IMD vs. Output Power.
80
17
70
16
60
50
P _out
40
W
30
f₁ = 175.0MHz
I_dq = 0.2A
V_DS = 28V
15
14
Gain
13
dB
12
20
11
10
10
0
9
0
1
2
3
4
5
6
7
8
Pin W
Pout
Gain
Figure 2 – Power Output & Gain
vs. Power Input.
D1002UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
MHz
175MHz
Z_S
Z_L
Ω
Ω
3.8 + j6.5 4.6 + j0.4
Typical S Parameters
! Vds=28V
Idq=0.2A
# MHZ S MA R 50
!Freq
MHz
50
100
150
200
250
300
350
400
450
500
550
600
S11
mag ang
0.76 -144
0.79 -155
0.84 -163
0.87 -169
0.90 -176
0.92 177
0.94 170
0.96 163
0.97 156
0.98 150
0.98 144
0.98 141
S21
mag ang
15.6 86
7.1 61
4.2 43
2.7 33
1.9 23
1.5 20
1.1 11
0.9
6
0.7 -2
0.6 -8
0.4 -12
0.4 -14
S12
mag ang
0.026 1
0.021 -9
0.012 -3
0.009 47
0.016 76
0.025 87
0.033 85
0.046 82
0.051 78
0.062 76
0.068 74
0.078 67
S22
mag ang
0.58 -119
0.66 -132
0.74 -144
0.81 -154
0.85 -163
0.88 -172
0.91 -180
0.94 172
0.96 165
0.98 157
0.98 152
0.98 148
Semelab plc. Telephone [phone]. Fax [phone].
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