D1001UK Datasheet, PDF (3/4 Pages) Seme LAB – GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED

D1001UK
P _out
W
45
40
35
30
25
20
15
10
5
0
0
90
80
70
60
50 Efficiency
40 %
30
V_DS = 28V
I_DQ = 0.1A
20
f = 175MHz
10
0
0.25 0.5 0.75 1 1.25 1.5 1.75 2
P _in W
Pout
Drain Efficiency
Figure 1 – Power Output and Efficiency
vs. Power Input.
-10
-15
-20
IMD3 _-25
dBc
-30
-35
-40
-45
0
V_DS = 28V
f₁ = 175.0MHz
f₂ = 175.1MHz
5
10 15 20 25 30 35 40
P _out W PEP
I_DQ = 0.1A
I_DQ = 0.5A
Figure 3 – IMD vs. Output Power.
45
40
35
30
P _{out 25}
W
20
15
10
5
0
0
V_DS = 28V
I_DQ = 0.1A
f = 175MHz
0.25 0.5 0.75 1 1.25 1.5 1.75
P _in W
Pout
Gain
19
18
17
16
15 Gain
14 dB
13
12
11
10
2
Figure 2 – Power Output & Gain
vs. Power Input.
D1001UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
MHz
175MHz
Z_S
Ω
5 + j14
Z_L
Ω
12 – j14
Typical S Parameters
!
V_DS = 28V, I_DQ = 0.1A
# MHZ S MA R 50
!Freq
MHz
50
100
150
200
250
300
350
400
450
500
550
600
S11
mag ang
0.780 -116
0.775 -135
0.795 -149
0.826 -159
0.853 -169
0.878 -179
0.903 171
0.923 161
0.944 151
0.963 142
0.978 136
0.985 131
S21
mag ang
18 112
9.312 85
6.077 68
4.193 53
3.216 43
2.566 35
1.991 23
1.655 18
1.322 9
1.121 4
0.899 -2
0.762 -7
S12
mag ang
0.034 25
0.030 11
0.022 14
0.017 44
0.023 74
0.039 89
0.052 86
0.070 84
0.080 80
0.098 76
0.108 72
0.119 66
S22
mag ang
0.642 -85
0.577 -103
0.613 -116
0.669 -128
0.715 -139
0.759 -150
0.801 -161
0.839 -173
0.878 177
0.914 167
0.945 159
0.966 153
Semelab plc. Telephone [phone]. Fax [phone]. e-mail [e-mail]
9/98
Website http://www.semelab.co.uk