ZT91_01 Datasheet, PDF (2/2 Pages) Seme LAB – MEDIUM POWER SILICON NPN PLANAR TRANSISTOR

ZT91
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
V_CEO(SUS) Collector – Emitter Sustaining Voltage
V_CE(sat) Collector – Emitter Saturation Voltage
V_BE(sat) Base – Emitter Saturation Voltage
I_CBO
Collector Cut-off Current
I_EBO
Emitter - Base Reverse Current
h_FE
DC Current Gain
fT
Gain Bandwidth Product
NF
Noise Figure
C_ob
Output Capacitance
C_ib
Input Capacitance
Test Conditions
I_C = 10mA
I_C = 200mA
I_C = 200mA
V_CB=V_CE
V_EB = 5V
V_CE = 10V
V_CE = 10V
V_CE = 10V
I_B = 0
I_B = 20mA
I_B = 20mA
I_E = 0
T_amb = 100°C
I_C = 0
I_C = 10mA
I_C = 200mA
I_C = 50mA
f = 10MHz
V_CE = 10V
I_C = 300µA
f = 1KHz
V_CB = 10V
V_EB = 1V
f=0
f=0
Min.
100
30
40
60
Typ.
250
6
Max. Unit
1.2
V
1.5
1
mA
60
0.1 µA
—
120
MHz
dB
25
pF
100
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 3032
Issue 1