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SML50B22 Datasheet, PDF (2/2 Pages) Seme LAB – N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
SML50B22
STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated)
BVDSS
Characteristic
Drain – Source Breakdown Voltage
Test Conditions
m VGS = 0V , ID = 250 A
IDSS
Zero Gate Voltage Drain Current
(VGS = 0V)
VDS = VDSS
VDS = 0.8VDSS , TC = 125°C
IGSS
Gate – Source Leakage Current
VGS = ±30V , VDS = 0V
VGS(TH) Gate Threshold Voltage
VDS = VGS , ID = 1.0mA
ID(ON)
RDS(ON)
On State Drain Current 2
Drain – Source On State Resistance 2
VDS > ID(ON) x RDS(ON) Max
VGS = 10V
VGS = 10V , ID = 0.5 ID [Cont.]
Min.
500
2
22
Typ. Max. Unit
V
25 mA
250
±100 nA
4V
A
0.24 W
DYNAMIC CHARACTERISTICS
Characteristic
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge3
Qgs
Gate – Source Charge
Qgd
Gate – Drain (“Miller”) Charge
td(on)
Turn–on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 1.6W
Min.
Typ.
3400
470
180
138
19
65
11
10
44
7
Max. Unit
pF
nC
ns
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic
Test Conditions
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current1
(Body Diode)
VSD
Diode Forward Voltage2
VGS = 0V , IS = – ID [Cont.]
trr
Reverse Recovery Time
m IS = – ID [Cont.] , dls / dt = 100A/ s
Qrr
m Reverse Recovery Charge IS = – ID [Cont.] , dls / dt = 100A/ s
Min.
Typ.
415
6.6
Max. Unit
22
A
88
1.3 V
ns
mC
THERMAL CHARACTERISTICS
Characteristic
Min.
RqJC
Junction to Case
RqJA
Junction to Ambient
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
m 2) Pulse Test: Pulse Width < 380 S , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Typ.
Max. Unit
0.45
°C/W
40
6/99