PMD18D100 Datasheet, PDF (2/2 Pages) Seme LAB – NPN DARLINGTON POWER TRANSISTOR

SEME
LAB
PMD18D100
ELECTRICAL CHARACTERISTICS (TJ = 0 to 200°C, unless otherwise stated)
Parameter
ON CHARACTERISTICS
Test Conditions
Collector - Emitter
V_{CE(sat) Saturation Voltage*}
I_C = 30A
I_B = 120mA
V_BE(on)
Base - Emitter Turn-on
Voltage*
I_C = 30A
V_CE = 3V
V_BE(sat)
h_FE
Is/b
Base - Emitter Saturation*
DC Current Gain*
Forward Bias Secondary
Breakdown Current
I_C = 30A
I_B = 120mA
I_C = 30A
V_CE = 3V
T_j = 25°C
V_CE = 30V
T_A = 25°C
1 sec non-repetitive pulse
OFF CHARACTERISTICS
Collector Emitter Breakdown
V_{(BR)CEO Voltage (Base Open)*}
I_CE = 100mA
T_j = 25°C
Collector Emitter Sustaining
V_{(SUS)CER Voltage*}
I_CE = 100mA
R_BE = 2.2KW
I_EBO
Emitter Base Leakage
Current
V_EB = 5V
I_C = 0A
I_CER
Collector Emitter Leakage
Current
V_CE = 67V
R_BE = 2.2KW
DYNAMIC CHARACTERISTICS
C_ob
Output Capacitance
V_CB = 10V
f = 1MHz
I_E = 0A
T_j = 25°C
h_fe
Small Signal Current Gain ^{IC = 18A}
f = 1KHz
V_CE = 3V
T_j = 25°C
Common Emitter Short
h_fe
Circuit Forward Transfer
Ratio
I_C = 18A
f = 1MHz
V_CE = 3V
T_j = 25°C
* Pulse Tested with pulse width £ 300ms, and duty cycle < 2%
Min. Typ. Max. Units
1000
10.0
2
V
2.8
V
2.8
V
20000
A
100
V
100
V
6.0 mA
15.0 mA
1200 pF
300
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Prelim. 10/99