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MHQ2222 Datasheet, PDF (2/2 Pages) Seme LAB – Quad Dual-In-Line NPN Silicon Transistors
MHQ2222
ELECTRICAL CHARACTERISTICS (TC =25°C unless otherwise stated)
Parameter
Test Conditions
Min. Typ.
V(BR)CEO* Collector-Emitter Breakdown Voltage IC = 10mA IB = 0
40
V(BR)CBO Collector-Base Breakdown Voltage IC = 10µA IE = 0
60
V(BR)EBO Emitter-Base Breakdown Voltage
IE = 10µA IC = 0
5
ICBO
Collector-Base Cut-Off Current
IE = 0
VCB = 50V
IEBO
Emitter-Base Cut-Off Current
IC = 0
VEB = 3V
IC = 10mA VCE = 10V
75
hFE*
Forward-current transfer ratio
IC = 150mA VCE = 10V
100
IC = 300mA VCE = 10V
30
VCE(sat)* Collector-Emitter Saturation Voltage IC = 150mA IB = 15mA
IC = 300mA IB = 30mA
VBE(sat)* Base-Emitter Saturated Voltage
IC = 150mA IB = 15mA
IC = 300mA IB = 30mA
Max.
50
50
0.4
1.6
1.3
2.5
Unit
V
nA
V
DYNAMIC CHARACTERISTICS
FT
Transition Frequency
Cobo
Output Capacitance
Cibo
Input Capacitance
ton
Turn-On Time
toff
Turn-Off Time
* Pulse test tp = 300µs, δ < 2%
IC = 20mA VCE = 20V
f = 100MHz
IE = 0
VCB = 10V
f = 1.0MHz
IC = 0
VEB = 0.5V
f = 1.0MHz
VCC = 30V
IC= 150mA
VBE(off) = 0.5V
IB1 = 15mA
VCC = 30V
IC= 150mA
IB1 = IB2 = 15mA
200
MHz
8
pF
30
25
nS
250
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both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
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DOC 7964, ISS 1