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| IRFY9140 Datasheet, PDF (2/2 Pages) Seme LAB – P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS | |||
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IRFY9140
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
STATIC ELECTRICAL RATINGS
BVDSS Drain â Source Breakdown Voltage VGS = 0
ID = 1mA
âBVDSS Temperature Coefficient of
Reference to 25°C
âTJ Breakdown Voltage
ID = 1mA
Static Drain â Source OnâState
RDS(on) Resistance
VGS = 10V
VGS = 10V
ID = -8.2A
ID = -13A
VGS(th) Gate Threshold Voltage
VDS = VGS
ID = 250µA
gfs
Forward Transconductance
VDS ⥠15V
IDS = -8.2A
IDSS Zero Gate Voltage Drain Current
VGS = 0
VDS = 0.8BVDSS
TJ = 125°C
IGSS Forward Gate â Source Leakage
VGS = 20V
IGSS Reverse Gate â Source Leakage
VGS = â20V
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
VGS = 0
Coss Output Capacitance
VDS = 25V
Crss Reverse Transfer Capacitance
f = 1MHz
Qg
Total Gate Charge
VGS = 10V
ID = -13A
VDS = 0.5BVDSS
Qgs Gate â Source Charge
ID = -13A
Qgd Gate â Drain (âMillerâ) Charge
VDS = 0.5BVDSS
td(on)
tr
td(off)
tf
TurnâOn Delay Time
Rise Time
TurnâOff Delay Time
Fall Time
VDD = -50V
ID = -13A
RG = 9.1â¦
SOURCE â DRAIN DIODE CHARACTERISTICS
IS
Continuous Source Current
ISM
Pulse Source Current
VSD Diode Forward Voltage
IS = -13A
VGS = 0
TJ = 25°C
trr
Reverse Recovery Time
IS = -13A
TJ = 25°C
Qrr
Reverse Recovery Charge
di / dt ⤠100A/µs VDD ⤠50V
PACKAGE CHARACTERISTICS
LD
Internal Drain Inductance
(from 6mm down drain lead pad to centre of die)
LS
Internal Source Inductance (from 6mm down source lead to centre of source bond pad)
-100
-2
6.2
31
3.7
7
Typ.
-0.09
1400
600
200
8.7
8.7
Max. Unit
V
V/°C
0.21
0.24
-4
25
250
100
-100
â¦
V
S((â¦â¦)
µA
nA
pF
60
nC
13
nC
35.2
35
85
ns
85
65
-13
A
-52
-4.2
V
280 ns
3.6
µC
nH
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/95
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