IRFQ110 Datasheet, PDF (2/2 Pages) Seme LAB – QUAD N-CHANNEL ENHANCEMENT MOSFETS

IRFQ110
ELECTRICAL CHARACTERISTICS FOR EACH CHIP(Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
BV_DSS
V_GS(th)
I_GSSF
I_GSSR
Drain – Source Breakdown Voltage
Gate Threshold Voltage
Gate – Source Leakage Forward
Gate – Source Leakage Reverse
I_DSS Zero Gate Voltage Drain Current
Static Drain Source On-State
R_{DS(on) Resistance*}
gfs
Forward Transductance *
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
V_GS = 0
V_DS = V_GS
V_GS = 20V
V_GS = -20V
V_DS = 80V.
V_GS = 10V
V_GS = _10V
V_DS = 15V
V_GS = 0
f = 1MHz
I_D = 1mA
I_D = 250µA
V_GS =0
T_C = 125°C
I_D = 0.6A
I_D = 1.0A
I_DS = 0.6A
V_DS = 25V
V_GS = 10V
I_DS = 1.0A
V_DS = 50V
V_DD = 50V
R_G = 24Ω
I_D = 1.0A
(MOSFET switching times are essentially
independent of operating temperature.)
BODY– DRAIN DIODE RATINGS & CHARACTERISTICS
I_S
Continuous Source Current Body
Modified MOS POWER
,
Diode
symbol showing the intergal /
I_SM
Source Current* (Body Diode)
V_SD Diode Forward Voltage *
t_rr
Reverse Recovery Time
Q_RR Reverse Recovery Charge
P-N junction rectifier.
5
I_S = 1.0A
V_GS = 0
I_F =1.0A
T_J = 25°C
d_i / d_t = 100A/µs V_DD = 50V
Min.
100
2.0
0.86
Typ.
180
82
15
Max. Unit
4.0
100
-100
25
250
0.70
0.80
V
nA
µA
Ω
S (^Ω)
pF
15
7.5
nC
7.5
20
25
ns
40
40
1.0
A
4.0
1.5
V
200 ns
0.83 µC
Notes
* Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
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Document Number ****
Issue 1