IRF9240_03 Datasheet, PDF (2/2 Pages) Seme LAB – P–CHANNEL POWER MOSFET

IRF9240
IRFN9240
IRF9240SMD
ELECTRICAL RATINGS (T_case = 25°C unless otherwise stated)
Characteristic
Test Conditions
BV_DSS Drain – Source Breakdown Voltage
V_GS = 0V , I_D = –1mA
V_GS(TH) Gate Threshold Voltage
V_DS = V_GS , I_D = –250µA
Gate – Source Leakage Current (forward)
I_GSS
Gate – Source Leakage Current (reverse)
V_GS = –20V
V_GS = 20V
V_DS = -160V , V_GS = 0V
I_DSS Zero Gate Voltage Drain Current
V_DS = -160V
V_GS = 0V , T_case = 125°C
I_D(ON) On State Drain Current ¹
V_DS > I_D(ON) x R_DS(ON) Max
V_GS = –10V
R_DS(ON) Static Drain – Source On-State Resistance
V_GS = –10V , I_D = –7A
g_fs
Forward Transconductance ¹
V_DS > I_D(ON) x R_DS(ON) Max
I_D = –7A
C_iss Input capacitance
V_GS = 0V
C_oss Output capacitance
V_DS = –25V
C_rss Reverse transfer capacitance
f = 1MHz
Q_g
Total Gate Charge
V_GS = –10V
Q_gs Gate – Source Charge
I_D = –11A
Q_gd Gate – Drain (“Miller”) Charge
V_DS = -100V
t_d(on)
t_r
t_d(off)
t_f
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V_DD = -100V
I_D = –11A
Z_O = 9.1Ω
L_D
Internal Drain Inductance
L_S
Internal Source Inductance
Min.
–200
–2
Typ. Max. Unit
V
–4 V
–100 nA
100 nA
–25 µA
–1 mA
–11
A
0.35 0.5 Ω
4
6
S
1200
570
pF
81
28
60
3.0
15 nC
4.5
38
35
85
ns
85
65
5.0
nH
12.5
nH
THERMAL CHARACTERISTICS
Characteristic
R_θJC Junction to Case
R_θJA Junction to Ambient
T_L
Max. Lead Temperature 0.063 ” from case for 10 sec.
(TO-3 package only)
(TO-3 package only)
Min.
Typ.
300
Max. Unit
1.0 °C/W
30 °C/W
°C
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic
I_S
Continuous Source Current (Body Diode)
I_SM
Pulsed Source Current1 (Body Diode)
V_SD Diode Forward Voltage2
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Test Conditions
V_GS = 0V , I_S = – 11A
T_case = 25°C
I_F = –11A , dl_F / dt = 100A/µs
T_j = 25°C
I_F = –11A , dl_F / dt = 100A/µs
T_j = 25°C
Min.
Typ.
Max. Unit
–11
A
–44
–4.6 V
270
ns
2.0
µC
1) Pulse Test: Pulse Width < 300µS , Duty Cycle ≤ 2% 2) Repetitive Rating: Pulse Width limited by maximum junction temperature.
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
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Document Number 3345
Issue 2