English
Language : 

IRF9240 Datasheet, PDF (2/2 Pages) Seme LAB – P-CHANNEL POWER MOSFET
◁
IRF9240
IRF9240–SMD
ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated)
BVDSS
VGS(TH)
Characteristic
Drain – Source Breakdown Voltage
Gate Threshold Voltage
Test Conditions
m VGS = 0V , ID = –250 A
m VDS = VGS , ID = –250 A
Gate – Source Leakage Current (forward)
IGSS
Gate – Source Leakage Current (reverse)
VGS = –20V
VGS = 20V
VDS = Max. Rating , VGS = 0V
IDSS Zero Gate Voltage Drain Current
VDS = 0.8 x Max. Rating
VGS = 0V , Tcase = 125°C
ID(ON) On State Drain Current 1
VDS > ID(ON) x RDS(ON) Max
VGS = –10V
RDS(ON) Static Drain – Source On-State Resistance
VGS = –10V , ID = –6A
gfs
Forward Transconductance 1
VDS > ID(ON) x RDS(ON) Max
ID = –6A
Ciss Input capacitance
VGS = 0V
Coss Output capacitance
VDS = –25V
Crss Reverse transfer capacitance
f = 1MHz
Qg
Total Gate Charge
VGS = –15V
Qgs Gate – Source Charge
ID = –22A
Qgd Gate – Drain (“Miller”) Charge
VDS = 0.8 x Max. Rating
td(on)
tr
td(off)
tf
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 0.5 x BVDSS
ID = –6A
ZO = 4.7W
LD
Internal Drain Inductance
LS
Internal Source Inductance
THERMAL CHARACTERISTICS
Characteristic
RqJC Junction to Case
RqCS Case to Sink
RqJA Junction to Ambient
TL
Max. Lead Temperature 0.063 ” from case for 10 sec.
(TO-3 package only)
(TO-3 package only)
(TO-3 package only)
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic
Test Conditions
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current1 (Body Diode)
VSD Diode Forward Voltage2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V , IS = – 11A
Tcase = 25°C
m IF = –11A , dlF / dt = 100A/ s
Tj = 150°C
m IF = –11A , dlF / dt = 100A/ s
Tj = 150°C
1) Pulse Test: Pulse Width < 300mS , Duty Cycle £ 2%
2) Repetitive Rating: Pulse Width limited by maximum junction temperature.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Min.
–200
–2
–11
4
Min.
Min.
Typ. Max. Unit
V
–4 V
–100 nA
100 nA
–250 mA
–1000 mA
A
0.35 0.5 W
6
S
1100 1300
375 450 pF
150 250
70
90
55
nC
15
20
30
10
15
ns
12
18
8
12
5.0
nH
12.5
nH
Typ.
0.1
300
Max. Unit
1.0 °C/W
°C/W
30 °C/W
°C
Typ.
Max. Unit
–11
A
–44
–4.6 V
270
ns
2.0
mC
Prelim. 7/00