IRF9140 Datasheet, PDF (2/2 Pages) Seme LAB – P-CHANNEL POWER MOSFET

IRF9140
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min. Typ.
STATIC ELECTRICAL RATINGS
BV_DSS Drain – Source Breakdown Voltage
∆BV_DSS Temperature Coefficient of
∆T_J Breakdown Voltage
Static Drain – Source On–State
R_{DS(on) Resistance 1}
V_GS(th) Gate Threshold Voltage
g_fs
Forward Transconductance ¹
I_DSS Zero Gate Voltage Drain Current
I_GSS
I_GSS
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
V_GS = 0
I_D = –1mA
Reference to 25°C
I_D = –1mA
V_GS = 10V
V_GS = 10V
V_DS = V_GS
V_DS ≥ –15V
V_GS = 0
V_GS = –20V
V_GS = 20V
I_D = –11A
I_D = –18A
I_D = –250mA
I_DS = –11A
V_DS = 0.8BV_DSS
T_J = 125°C
DYNAMIC CHARACTERISTICS
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
V_GS = 0
V_DS = –25V
f = 1MHz
V_GS = –10V
I_D = –18A
V_DS = 0.5BV_DSS
V_DD = –50V
I_D = –18A
R_G = 9.1Ω
SOURCE – DRAIN DIODE CHARACTERISTICS
I_S
Continuous Source Current
I_SM
Pulse Source Current ²
V_SD Diode Forward Voltage ¹
t_rr
Reverse Recovery Time ¹
Q_rr
Reverse Recovery Charge
t_on
Forward Turn–On Time
I_S = –18A
T_J = 25°C
V_GS = 0
I_F = –18A
T_J = 25°C
d_i / d_t ≤ –100A/µs V_DD ≤ –50V
PACKAGE CHARACTERISTICS
L_D
Internal Drain Inductance (measured from 6mm down drain lead to centre of die)
L_S
Internal Source Inductance (from 6mm down source lead to source bond pad)
THERMAL CHARACTERISTICS
R_θJC
R_θCS
R_θJA
Thermal Resistance Junction – Case
Thermal Resistance Case – Sink
Thermal Resistance Junction – Ambient
–100
–0.087
–2
6.2
1400
600
200
31
3.7
7.0
170
Negligible
5.0
13
0.12
Notes
1) Pulse Test: Pulse Width ≤ 300ms, δ ≤ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].
Max. Unit
V
V/°C
0.2
0.23
–4
–25
–250
–100
100
Ω
V
S (É)
µA
nA
pF
60
13
nC
35.2
35
85
ns
85
65
–18
A
–72
–4.2 V
280 ns
3.6
µC
nH
1.0
°C/W
30
Prelim. 9/96