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HCT700 Datasheet, PDF (2/2 Pages) Seme LAB – COMPLEMENTARY SWITCHING TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
◁
SEME
LAB
HCT700
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
NPN
Parameter
Test Conditions
Min. Max.
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICES
Off Characteristics
Collector – Base Breakdown Voltage
Collector – Emitter Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Base
Cut-off Current
Emitter– Base Cut-off Current
Collector – Emitter Cut-off Current
IC = 10mA
IC = 10mA
IE = 10mA
IE = 0
Tamb = 25°C
IE = 0
Tamb = 150°C
IC = 0
Tamb = 25°C
VCE = 50V
IE = 0
IB = 0
IC = 0
VCB = 60V
VCB = 50V
VCB = 60V
VCB = 50V
VEB = 4V
VEB = 3.5V
75
50
6.0
10
10
10
1.0
On Characteristics
hFE
VCE(SAT
VBE(SAT)
DC Current Gain
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
VCE = 10V
VCE = 10V
VCE = 10V
VCE = 10V
VCE = 10V
VCE = 10V
Tamb = –55°C
IC = 150mA
IC = 500mA
IC = 150mA
IC = 500mA
IC = 0.1mA
IC = 1mA
IC = 10mA
IC = 150mA 1
IC = 500mA 1
IC = 10mA
IC = 1mA
IB = 15mA 1
IB = 50mA 1
IB = 15mA 1
IB = 50mA 1
50
75 325
100
100 300
30
35
0.30
1.00
0.60 1.20
2.00
Small Signal Characteristics
hfe
Small Signal Current Gain
VCE = 10V
IC = 1mA
50
f = 1kHz
hfe
Cobo
Cibo
Small Signal Current Gain
Output Capacitance
Input Capacitance
VCE = 20V
IC = 20mA
2.5
f = 100MHz IC = 50mA
VCE = 10V f = 100kHz to 1MHz
8.0
VEB = 2V f = 100kHz to 1MHz
25
VEB = 0.5V f = 100kHz to 1MHz
Small Signal Characteristics
ton
Turn On Time
VCC = 30V IC = 150mA
35
IB1 = 15mA
toff
Turn Off Time
VCC = 30V IC = 150mA
300
IB1 = IB2 = 15mA
1 Pulse Test: Pulse Width £ 300ms, d £ 2%
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
PNP
Min. Max. Unit
60
V
60
V
5.0
V
nA
10
mA
10
nA
50
mA
75
100 450
100
100 300 —
50
50
0.40
V
1.60
1.30
V
2.60
100
—
—
2.0
8.0 pF
pF
30
45 ns
300 ns
Prelim. 4/94