D2290UK Datasheet, PDF (2/2 Pages) Seme LAB – GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W - 12.5V - 1GHz SINGLE ENDED

D2290UK
ELECTRICAL CHARACTERISTICS (T_case = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source
BV_{DSS Breakdown Voltage}
V_GS = 0
I_D = 10mA
40
I_DSS
Zero Gate Voltage
Drain Current
V_DS = 12.5V
V_GS = 0
I_GSS Gate Leakage Current
V_GS = 20V
V_DS = 0
V_GS(th) Gate Threshold Voltage*
I_D = 10mA
V_DS = V_GS
0.5
g_fs
Forward Transconductance*
V_DS = 10V
I_D = 0.2A
0.18
G_PS Common Source Power Gain
P_O = 1W
10
η
Drain Efficiency
V_DS = 12.5V
I_DQ = 50mA
40
VSWR Load Mismatch Tolerance
f = 1GHz
20:1
C_iss
C_oss
C_rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_DS = 0V V_GS = –5V f = 1MHz
V_DS = 12.5V V_GS = 0 f = 1MHz
V_DS = 12.5V V_GS = 0 f = 1MHz
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%
Typ.
Max. Unit
V
1
mA
1
µA
7
V
S
dB
%
—
12
pF
10
pF
1
pF
THERMAL DATA
R_{THj–case}
Thermal Resistance Junction – Case
Max. 175 °C / W
Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].
Document Number 3890
Issue 3