D2254UK Datasheet, PDF (2/2 Pages) Seme LAB – METAL GATE RF SILICON FET

D2254UK
ELECTRICAL CHARACTERISTICS (T_case = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BV_DSS
I_DSS
I_GSS
V_GS(th)
g_fs
Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
G_PS
h
VSWR
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
PER SIDE
V_GS = 0
I_D = 10mA
V_DS = 12.5V
V_GS = 0
V_GS = 20V
V_DS = 0
I_D = 10mA
V_DS = V_GS
V_DS = 10V
I_D = 0.4A
TOTAL DEVICE
P_O = 10W
V_DS = 12.5V
I_DQ = 0.4A
f = 1GHz
40
1
0.36
10
40
20:1
C_iss
C_oss
C_rss
PER SIDE
Input Capacitance
V_DS = 0
V_GS = –5V f = 1MHz
Output Capacitance
V_DS = 12.5V V_GS = 0 f = 1MHz
Reverse Transfer Capacitance V_DS = 12.5V V_GS = 0 f = 1MHz
* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2%
Typ.
Max. Unit
V
2
mA
2
mA
7
V
S
dB
%
—
24
pF
20
pF
2
pF
THERMAL DATA
R_{THj–case}
Thermal Resistance Junction – Case
Max. 6.0°C / W
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Prelim. 9/00