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| D2211UK Datasheet, PDF (2/2 Pages) Seme LAB – METAL GATE RF SILICON FET | |||
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D2211UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
DrainâSource
BVDSS Breakdown Voltage
VGS = 0
ID = 10mA
40
IDSS
Zero Gate Voltage
Drain Current
VDS = 12.5V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs
Forward Transconductance*
GPS Common Source Power Gain
h
Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
ID = 10mA
VDS = 10V
PO = 10W
VDS = 7.2V
f = 1GHz
VDS = 0
VDS = VGS
ID = 0.8A
IDQ = 0.8A
1
1.44
7
40
20:1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 0
VGS = â5V f = 1MHz
VDS = 12.5V VGS = 0 f = 1MHz
VDS = 12.5V VGS = 0 f = 1MHz
* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2%
Typ.
Max. Unit
V
8
mA
8
mA
7
V
S
dB
%
â
96
pF
80
pF
8
pF
THERMAL DATA
RTHjâcase
Thermal Resistance Junction â Case
Max. 2.5°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 9/00
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