 English |
|
|
|
|
|
|
|
| D2054UK Datasheet, PDF (2/2 Pages) Seme LAB – METAL GATE RF SILICON FET | |||
| |||
| ◁ |
D2054UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
DrainâSource
BVDSS Breakdown Voltage
PER SIDE
VGS = 0
ID = 10mA
65
IDSS
Zero Gate Voltage
Drain Current
VDS = 28V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage *
gfs
Forward Transconductance *
GPS Common Source Power Gain
h
Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
VDS = 0
ID = 10mA
VDS = VGS
VDS = 10V
ID = 0.4A
TOTAL DEVICE
PO = 10W
VDS = 28V
IDQ = 0.4A
f = 1GHz
1
0.36
13
40
20:1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 0V
VDS = 28V
VDS = 28V
PER SIDE
VGS = â5V
VGS = 0
VGS = 0
f = 1MHz
f = 1MHz
f = 1MHz
Typ.
Max. Unit
V
2
mA
2
mA
7
V
S
dB
%
â
24
pF
12
pF
1
pF
* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2%
THERMAL DATA
RTHjâcase
Thermal Resistance Junction â Case
Max. 6.0°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 9/00
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese