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| D2053UK Datasheet, PDF (2/2 Pages) Seme LAB – METAL GATE RF SILICON FET | |||
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D2053UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BVDSS
IDSS
IGSS
VGS(th)
gfs
DrainâSource Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
GPS
h
VSWR
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
PER SIDE
VGS = 0
ID = 10mA
VDS = 28V
VGS = 0
VGS = 20V
VDS = 0
ID = 10mA
VDS = VGS
VDS = 10V
ID = 0.2A
TOTAL DEVICE
PO = 5W
VDS = 28V
IDQ = 0.2A
f = 1GHz
65
1
0.18
13
40
20:1
Ciss
Coss
Crss
Input Capacitance
VDS = 28V
Output Capacitance
VDS = 28V
Reverse Transfer Capacitance VDS = 28V
PER SIDE
VGS = â5V
VGS = 0
VGS = 0
f = 1MHz
f = 1MHz
f = 1MHz
* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2%
Typ.
Max. Unit
V
1
mA
1
mA
7
V
S
dB
%
â
12
pF
6
pF
0.5
pF
THERMAL DATA
RTHjâcase
Thermal Resistance Junction â Case
Max. 12°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 9/00
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