D2020UK Datasheet, PDF (2/2 Pages) Seme LAB – METAL GATE RF SILICON FET

D2020UK
ELECTRICAL CHARACTERISTICS (T_case = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source
BV_{DSS Breakdown Voltage}
V_GS = 0
I_D = 10mA
65
I_DSS
Zero Gate Voltage
Drain Current
V_DS = 28V
V_GS = 0
I_GSS Gate Leakage Current
V_GS(th) Gate Threshold Voltage*
g_fs
Forward Transconductance*
G_PS Common Source Power Gain
η
Drain Efficiency
VSWR Load Mismatch Tolerance
V_GS = 20V
I_D = 10mA
V_DS = 10V
P_O = 5W
V_DS = 28V
f = 1GHz
V_DS = 0
V_DS = V_GS
I_D = 0.4A
I_DQ = 0.4A
1
0.36
13
40
20:1
C_iss
C_oss
C_rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_DS = 0V
V_DS = 28V
V_DS = 28V
V_GS = –5V f = 1MHz
V_GS = 0 f = 1MHz
V_GS = 0 f = 1MHz
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%
Typ.
Max. Unit
V
2
mA
1
µA
5
V
S
dB
%
—
24
pF
12
pF
1
pF
THERMAL DATA
R_{THj–case}
Thermal Resistance Junction – Case
Max. 6°C / W
Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].
Prelim. 9/95