D2009UK Datasheet, PDF (2/2 Pages) Seme LAB – ROHS COMPLIANT METAL GATE RF SILICON FET

D2009UK
ELECTRICAL CHARACTERISTICS (T_case = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
PER SIDE
BV_DSS
Drain–Source Breakdown
Voltage
V_GS = 0
I_D = 10mA
65
I_DSS
Zero Gate Voltage
Drain Current
V_DS = 28V
V_GS = 0
I_GSS
V_GS(th)
g_fs
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
V_GS = 20V
I_D = 10mA
V_DS = 10V
V_DS = 0
V_DS = V_GS
I_D = 2A
1
0.36
TOTAL DEVICE
G_PS
Common Source Power Gain P_O = 10W
10
η
Drain Efficiency
V_DS = 28V
I_DQ = 0.4A
40
VSWR Load Mismatch Tolerance
f = 1GHz
20:1
C_iss
C_oss
C_rss
PER SIDE
Input Capacitance
V_DS = 28V V_GS = –5V f = 1MHz
Output Capacitance
V_DS = 28V V_GS = 0 f = 1MHz
Reverse Transfer Capacitance V_DS = 28V V_GS = 0 f = 1MHz
* Pulse Test: Pulse Duration = 300 μs , Duty Cycle ≤ 2%
Typ.
Max. Unit
V
2
mA
1
μA
7
V
S
dB
%
—
24
pF
12
pF
1
pF
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R_{THj–case}
Thermal Resistance Junction – Case
Max. 3.0°C / W
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Document Number 5535
Issue 1