D1211UK Datasheet, PDF (2/2 Pages) Seme LAB – METAL GATE RF SILICON FET

D1211UK
ELECTRICAL CHARACTERISTICS (T_case = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source
BV_{DSS Breakdown Voltage}
V_GS = 0
I_D = 10mA
40
I_DSS
Zero Gate Voltage
Drain Current
V_DS = 12.5V
V_GS = 0
I_GSS Gate Leakage Current
V_GS(th) Gate Threshold Voltage*
g_fs
Forward Transconductance*
G_PS Common Source Power Gain
η
Drain Efficiency
VSWR Load Mismatch Tolerance
V_GS = 20V
I_D = 10mA
V_DS = 10V
P_O = 10W
V_DS = 12.5V
f = 500MHz
V_DS = 0
V_DS = V_GS
I_D = 1A
I_DQ = 0.4A
0.5
0.8
10
50
20:1
C_iss
C_oss
C_rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_DS = 0V V_GS = –5V f = 1MHz
V_DS = 12.5V V_GS = 0 f = 1MHz
V_DS = 12.5V V_GS = 0 f = 1MHz
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%
Typ.
Max. Unit
V
1
mA
1
µA
7
V
S
dB
%
—
60
pF
40
pF
4
pF
THERMAL DATA
R_{THj–case}
Thermal Resistance Junction – Case
Max. 6°C / W
Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].
Prelim. 12/95