D1209UK Datasheet, PDF (2/2 Pages) Seme LAB – METAL GATE RF SILICON FET

D1209UK
ELECTRICAL CHARACTERISTICS (T_case = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BV_DSS
I_DSS
I_GSS
V_GS(th)
g_fs
Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
G_PS
h
VSWR
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
PER SIDE
V_GS = 0
I_D = 10mA
V_DS = 12.5V
V_GS = 0
V_GS = 20V
V_DS = 0
I_D = 10mA
V_DS = V_GS
V_DS = 10V
I_D = 1A
TOTAL DEVICE
P_O = 20W
V_DS = 12.5V
I_DQ = 0.8A
f = 400MHz
40
1
0.8
10
50
20:1
C_iss
C_oss
C_rss
PER SIDE
Input Capacitance
V_DS = 0
V_GS = –5V f = 1MHz
Output Capacitance
V_DS = 12.5V V_GS = 0 f = 1MHz
Reverse Transfer Capacitance V_DS = 12.5V V_GS = 0 f = 1MHz
* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2%
Typ.
Max. Unit
V
1
mA
1
mA
7
V
S
dB
%
—
60
pF
40
pF
4
pF
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R_{THj–case}
Thermal Resistance Junction – Case
Max. 1.75°C / W
Semelab plc. Telephone [phone]. Fax [phone].
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