D1208UK Datasheet, PDF (2/2 Pages) Seme LAB – METAL GATE RF SILICON FET

D1208UK
ELECTRICAL CHARACTERISTICS (T_case = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source
BV_{DSS Breakdown Voltage}
PER SIDE
V_GS = 0
I_D = 100mA
40
I_DSS
Zero Gate Voltage
Drain Current
V_DS = 12.5V
V_GS = 0
I_GSS Gate Leakage Current
V_GS = 20V
V_DS = 0
V_GS(th) Gate Threshold Voltage*
I_D = 10mA
V_DS = V_GS
1
g_fs
Forward Transconductance*
V_DS = 10V
I_D = 2A
1.6
TOTAL DEVICE
G_PS Common Source Power Gain
P_O = 40W
10
η
Drain Efficiency
V_DS = 12.5V
I_DQ = 1.6A
50
VSWR Load Mismatch Tolerance
f = 400MHz
20:1
C_iss
C_oss
C_rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
PER SIDE
V_DS = 0V V_GS = –5V f = 1MHz
V_DS = 12.5V V_GS = 0 f = 1MHz
V_DS = 12.5V V_GS = 0 f = 1MHz
Typ.
Max. Unit
V
2
mA
1
µA
5.5
V
S
dB
%
—
120 pF
80
pF
8
pF
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R_{THj–case}
Thermal Resistance Junction – Case
Max. 1.0°C / W
Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].
Prelim. 3/95