D1094UK Datasheet, PDF (2/2 Pages) Seme LAB – METAL GATE RF SILICON FET

D1094UK
ELECTRICAL CHARACTERISTICS (T_case = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source
BV_{DSS Breakdown Voltage}
V_GS = 0
I_D = 10mA
65
I_DSS
Zero Gate Voltage
Drain Current
V_DS = 28V
V_GS = 0
I_GSS Gate Leakage Current
V_GS(th) Gate Threshold Voltage *
g_fs
Forward Transconductance *
G_PS Common Source Power Gain
h
Drain Efficiency
VSWR Load Mismatch Tolerance
V_GS = 20V
I_D = 10mA
V_DS = 10V
P_O = 20W
V_DS = 28V
f = 400MHz
V_DS = 0
V_DS = V_GS
I_D = 0.6A
I_DQ = 0.6A
1
1.08
11
50
20:1
C_iss
C_oss
C_rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_DS = 0
V_DS = 28V
V_DS = 28V
V_GS = –5V f = 1MHz
V_GS = 0 f = 1MHz
V_GS = 0 f = 1MHz
Typ.
Max. Unit
V
6
mA
6
mA
7
V
S
dB
%
—
72
pF
36
pF
3
pF
* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R_{THj–case}
Thermal Resistance Junction – Case
Max.3.5°C / W
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website http://www.semelab.co.uk
Prelim. 3/00