D1016UK Datasheet, PDF (2/4 Pages) Seme LAB – METAL GATE RF SILICON FET

D1016UK
ELECTRICAL CHARACTERISTICS (T_case = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BV_DSS
Drain–Source Breakdown
Voltage
PER SIDE
V_GS = 0
I_D = 100mA
70
I_DSS
Zero Gate Voltage
Drain Current
V_DS = 28V
V_GS = 0
I_GSS
Gate Leakage Current
V_GS = 20V
V_DS = 0
V_GS(th) Gate Threshold Voltage*
I_D = 10mA
V_DS = V_GS
1
g_fs
Forward Transconductance*
V_DS = 10V
I_D = 1A
0.8
TOTAL DEVICE
G_PS
Common Source Power Gain P_O = 40W
13
h
Drain Efficiency
V_DS = 28V
I_DQ = 0.4A
50
VSWR Load Mismatch Tolerance
f = 400MHz
20:1
C_iss
C_oss
C_rss
PER SIDE
Input Capacitance
V_DS = 28V V_GS = –5V f = 1MHz
Output Capacitance
V_DS = 28V V_GS = 0 f = 1MHz
Reverse Transfer Capacitance V_DS = 28V V_GS = 0 f = 1MHz
* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2%
Typ.
Max. Unit
V
1
mA
1
mA
7
V
S
dB
%
—
60
pF
30
pF
2.5
pF
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R_{THj–case}
Thermal Resistance Junction – Case
Max. 1.75°C / W
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Prelim.12/00